sot-363 plastic-encapsulate transistors UMX1N general purpose transis tors(dual transistors) features z two 2sc2412k chips in a sot- 3 63 package z mounting possible with sot- 3 63 automatic mounting machines z transistor elements are indepe ndent, eliminating interference z mounting cost and area can be cut in half marking:x1 maximum ratings (t a =25 unless otherwise noted) symbol para m ete r value units v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 7 v i c collector current -continuous 150 ma p c collector power dissipation 150 mw t j junction temperature 150 t stg storage temperature -55 ~+ 150 electrical characteristics (ta=25 unless otherwise specified) parameter symbol test conditions m in t yp m ax unit collector-base breakdown voltage v (br)cbo i c =50 a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =50 a,i c =0 7 v collector cut-off current i cbo v cb =60v,i e =0 0.1 a emitter cut-off current i ebo v eb =7v,i c =0 0.1 a dc current gain h fe v ce =6v,i c =1ma 120 560 collector-emitter saturation voltage v ce(sat) i c =50ma,i b =5ma 0.4 v transition frequency f t v ce =12v,i c =2ma,f=100mhz 180 mhz collector output capacitance c ob v cb =12v,i e =0,f=1mhz 2.0 3.5 pf sot-363 (3) (2) (1) (4) (6)(5) tr 2 tr 1 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
|
